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Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC lattice spacings. The polymorphs of SiC include various amorphous phases observed in thin films and fibers, as well as a large family of similar crystalline structures called polytypes. They are variations of the same chemical compound that are identical in two dimensions and differ in the third. Thus, they can be viewed as layers stacked in a certain sequence. The atoms of those layers can be arranged in three configurations, A, B or C, to achieve closest packing. The stacking sequence of those configurations defines the crystal structure, where the unit cell is the shortest periodically repeated sequence of the stacking sequence. This description is not unique to SiC, but also applies to other binary tetrahedral materials, such as zinc oxide and cadmium sulfide. ==Categorizing the polytypes== A shorthand has been developed to catalogue the vast number of possible polytype crystal structures: Let us define three SiC bilayer structures (that is 3 atoms with two bonds in between in the pictures below) and label them as A, B and C. Elements A and B do not change the orientation of the bilayer (except for possible rotation by 120°, which does not change the lattice and is ignored hereafter); the only difference between A and B is shift of the lattice. Element C, however, twists the lattice by 60°. Image:SiC2HstructureA.jpg|2H-SiC File:SiC4H structure A.jpg|4H-SiC Image:SiC6HstructureA.jpg|6H-SiC Using those A,B,C elements, we can construct ''any'' SiC polytype. Shown above are examples of the hexagonal polytypes 2H, 4H and 6H as they would be written in the Ramsdell classification scheme where the number indicates the layer and the letter indicates the Bravais lattice.〔Ramsdell L.S., "Studies on Silicon Carbide" Am. Mineral. 32, (1945), p.64-82〕 The 2H-SiC structure is equivalent to that of wurtzite and is composed of only elements A and B stacked as ABABAB. The 4H-SiC unit cell is two times longer, and the second half is twisted compared to 2H-SiC, resulting in ABCB stacking. The 6H-SiC cell is three times longer than that of 2H, and the stacking sequence is ABCACB. The cubic 3C-SiC (not shown) has ABC stacking. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Polymorphs of silicon carbide」の詳細全文を読む スポンサード リンク
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